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| FDD6670AS May 2005 FDD6670AS General Description 30V N-Channel PowerTrench(R) SyncFETTM Features * 76 A, 30 V RDS(ON) max= 8.0 m @ VGS = 10 V RDS(ON) max= 10.4 m @ VGS = 4.5 V * Includes SyncFET Schottky body diode * Low gate charge (29nC typical) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability . The FDD6670AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low and low gate charge. The FDD6670AS RDS(ON) includes a patented combination of a MOSFET monolithically integrated with a schottky diode. The performance of the FDD6670AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6670A in parallel with a Schottky diode. Applications * DC/DC converter * Low side notebook D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation TA=25oC unless otherwise noted Parameter Ratings 30 20 (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Units V V A W 76 100 70 3.2 1.3 -55 to +150 TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 1.8 40 96 C/W C/W C/W Package Marking and Ordering Information Device Marking FDD6670AS FDD6670AS Device FDD6670AS FDD6670AS_NL (Note 4) Reel Size 13'' 13'' Tape width 16mm 16mm Quantity 2500 units 2500 units FDD6670AS Rev A(X) (c)2005 Fairchild Semiconductor Corporation FDD6670AS Electrical Characteristics Symbol WDSS IAR TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 15 V, ID=14A Min Typ Max 245 14 Units mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) VGS = 0 V, ID = 1 mA ID = 10 mA, Referenced to 25C VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ= 125C VGS = 20 V, VDS = 0 V 30 29 500 6.5 100 V mV/C A mA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 1 mA ID = 10 mA, Referenced to 25C VGS = 10 V, ID = 13.8 A ID = 11.7 A VGS = 4.5 V, VGS= 10 V, ID = 13.8A, TJ= 125C VGS = 10 V, VDS = 15 V, VDS = 5 V ID = 13.8 A 1 1.8 -3.3 6.8 8.3 9.3 3 V mV/C 8.0 10.4 11.6 m ID(on) gFS 50 52 A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1580 440 170 1.8 pF pF pF VGS = 15 mV, f = 1.0 MHz Switching Characteristics td(on) tr td(off) tf td(on) tr td(off) tf Qg(TOT) Qg(TOT) Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDS = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 10 12 28 20 20 22 45 36 27 29 42 23 40 22 ns ns ns ns ns ns ns ns nC nC nC nC VDS = 15 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 15 16 26 13 Total Gate Charge at VGS=10V Total Gate Charge at VGS=5V Gate-Source Charge Gate-Drain Charge VDS = 15 V, ID = 13.8 A, 29 16 4.6 5.5 Drain-Source Diode Characteristics VSD trr Qrr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = 3.5 A VGS = 0 V, IS = 7 A IF = 3.5 A, diF/dt = 300 A/s (Note 2) (Note 2) 0.46 0.59 20 15 0.7 V ns nC (Note 3) FDD6670AS Rev A (X) FDD6670AS Electrical Characteristics TA = 25C unless otherwise noted Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% PD R DS(ON) 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A 4. FDD6670AS_NL is a lead free product. The FDD6670AS_NL marking will appear on the reel label. FDD6670AS Rev A (X) FDD6670AS Typical Characteristics 100 2.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 10V 4.0V VGS = 3.0V ID, DRAIN CURRENT (A) 80 2.2 6.0V 60 4.5V 3.5V 1.8 3.5V 40 1.4 4.0V 4.5V 6.0V 3.0V 20 1 10V 2.5V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 2.5 0.6 0 20 40 60 ID, DRAIN CURRENT (A) 80 100 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.025 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 64A VGS = 10V 1.4 RDS(ON), ON-RESISTANCE (OHM) ID = 32A 0.02 1.2 0.015 1 TA = 125oC 0.01 0.8 TA = 25 C o 0.6 -50 -25 0 25 50 75 o TJ, JUNCTION TEMPERATURE ( C) 100 125 0.005 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 100 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 80 ID, DRAIN CURRENT (A) VGS = 0V 10 60 1 TA = 125oC 25oC TA = 125 C 40 o -55oC 0.1 -55 C 0.01 o 20 25oC 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 4 4.5 0.001 0 0.1 0.2 0.3 0.4 0.5 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.6 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDD6670AS Rev A (W) FDD6670AS Typical Characteristics (continued) 10 VGS, GATE-SOURCE VOLTAGE (V) ID =13.8A 2400 f = 1MHz VGS = 0 V 8 20V CAPACITANCE (pF) VDS = 10V 1800 Ciss 6 15V 1200 Coss 4 600 2 Crss 0 0 5 10 15 20 Qg, GATE CHARGE (nC) 25 30 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 100s 1ms 10ms 100ms 1s 10s Figure 8. Capacitance Characteristics. 50 SINGLE PULSE RJA = 96C/W TA = 25C ID, DRAIN CURRENT (A) 40 10 30 1 DC 20 0.1 VGS = 10V SINGLE PULSE RJA = 96oC/W TA = 25 C o 10 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) * RJA RJA = 96 C/W P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDD6670AS Rev A (W) FDD6670AS Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDD6670AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) 0.1 125oC 0.01 0.001 100oC CURRENT : 0.8A/div 0.0001 25oC 0 10 20 VDS, REVERSE VOLTAGE (V) 30 0.00001 Figure 14. SyncFET body diode reverse leakage versus drain-source voltage and temperature. TIME : 12.5ns/div Figure 12. FDD6670AS SyncFET body diode reverse recovery characteristic. For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDD6670A). CURRENT : 0.8A/div TIME : 12.5ns/div Figure 13. Non-SyncFET (FDD6670A) body diode reverse recovery characteristic. FDD6670AS Rev A (W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 |
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